Ultra-Wideband C-Band 4-8 GHz 50W Potentia Amplifier RF System

Haec 50W latitudinis potentia amplificans est summus moduli effectus RF designatus ad applicationes extrahendas 4GHz ad 8GHz frequentiam per 4GHz ad 8GHz potentias robustas applicandas disposito. Adhibendis technicis provectis GaN (Gallium Nitride) technologiam praebet, altam vim densitatis, excellentem efficientiam, et certam linearitatem supra band longam momentaneam tradit. Amplificator machinatur ad stabilitatem, diuturnitatem, et ad constantiam faciendam in ambitibus exigendis.

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Key Features

Lata euismod: Seamlessly operatur per 4GHz ad 8GHz (C-Band) spectrum sine necessitate bandi mutandi.

High Output Power: Delivers a typical saturated output power of 50 Watts (47dBm) minimum trans band.

Maximum Lucrum: Features typicam quaestum parvum signum 50dB (minimum), amplificationem efficacem praestans ex fontibus humilibus potentiae.

Praeclarus quaestus flatus: superior quaestum obtinet planiciem typice ±1.5dB per totam frequentiam range pro uniformi effectus.

Maximum Efficientiam: Incorporat summus efficientiam consilium, de more assequendis 30% Potentia Added Efficientiam (PAE), reducendo onus scelerisque ac potentiae DC consummatio.

Robusta linea linearia: punctum compressionis 1dB altum (OP1dB) typice > 47dBm praebet, amplificationem tam linearem quam saturatam pro variis technis modulationibus sustinens.

Integrated Protection & Control: Includes comprehensive salute features: Reverse intentione Protection, Over-temperate Shutdown, and Output ONERO / VSWR Praesidium. Vexillum analogon interface pro biac potestate, da/disable (TTL), et status vigilantia.

Scelerisque Procuratio: Designatum cum baseplate efficiente ratio refrigerandi, ut certas operationes sub plena onere conditionibus conservet. Casus perficiendi temperatus range: -40°C ad +85°C.

Ruggedized Construction: colitur in sarcina robusta, hermetically obsignata metallica pro superiori protegendi et environmental mollitiae, rei militaris, aerospace, et applicationum industrialium aptum.

Nec.	Descriptio	Symbolum	Min	Typ	Max	Unitas	Animadverte
1 .	Operating Frequency	BW	4000		8000	MHz
2.	Input Power	Pin		0		dBm
3.	Output Power CW	Psat	47	48.5	49.5	dBm	Continuus unda
4.	Potestas Lucrum	Gp	47		49.5	dBm	@ Pin=0 dBm
5.	Potentia Lucrum Flatness	Gp		±1.5		dB*	@ Pin=0 dBm
6.	Parva SignalGain	G	49	50.5	52	dB*	@ Pin=-5dBm
7.	Minima signalGain Planities	G		±2		dB*	@ Pin=-5dBm
VIII.	Input Redi damnum	S11		-15		dB*
VIIII.	Operans intentione	Vdc	28	28	32	V
10.	Current Consummatio	A		6	8	A	@ Pout=50~90W
11.	Operatio Temperature		-40℃~+50℃
XII.	RF Connector Input		SMA, Female
XIII.	RF Connector Output		SMA, Female
XIIII.	Pondus			0.439	0.50	Kg
XV.	Longitudo * Latitudo * altitudo		1348022			mm
16.	Input Power	PinMax	-5		5	dBm
17.	Interface Definition (Femina 7W2)	VDD	A1	Humus
		GND	A2	28Vdc
		Current Sensus	1	Analoga voltage relativa ad modulum currente@100mV/A
		Sensus Temp	2	Analog voltage relativo ad Module'sTemperature@10mV/℃
		Admitte	3	Amplifier Admitte			Amplifier Admitte: TTL Logica High（3.3V） Interna trahuntur-low
		GND	4	Humus
	Altiore dimensionis	Nota: 1、 Summae dimensiones tantum referentes sunt. 2、 Magnitudo opportune augeri vel minui potest secundum petitiones emptoris. 3、 Positiones inputationis, output instrumenti et copiae instrumenti interfaciendi secundum necessitates clientium mutari possunt.

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